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Kiʻi i hōʻike ʻia ʻo Cubic Silicon Carbide (β-SiC)
  • ʻO ke karbida silika kupika (β-SiC)
  • ʻO ke karbida silika kupika (β-SiC)
  • ʻO ke karbida silika kupika (β-SiC)
  • ʻO ke karbida silika kupika (β-SiC)

ʻO ke karbida silika kupika (β-SiC)

 









  • Waihoʻoluʻu:ʻōmaʻomaʻo
  • ʻAno:Pauka
  • Noi:Hoʻowali ʻana
  • Mea Hana:kalaka silicon
  • Paʻakikī: 10
  • Hiʻona:Ka Hana Kiʻekiʻe
  • MOQ:100kg

    • Nā kikoʻī huahana

    PALAPALA NOI

    ʻO ke karbida silika kupika (β-SiC)

    sicc2

     

    He pauka hina-ʻōmaʻomaʻo ka pauka keramika silicon carbide cubic. ʻO kona ʻano molekala kemika: SiC, kaumaha molekala 40.10, density 3.2g/cm3, kiko heheʻe 2973 ℃, coefficient hoʻonui wela 2.98 × 10-6K-1.

     

    ʻO ka pauka seramika silikona carbide he maʻemaʻe kiʻekiʻe, ka hoʻolaha nui o nā ʻāpana haiki, nā pores liʻiliʻi, ka hana sintering kiʻekiʻe, ke ʻano kristal maʻamau, ka conductivity thermal maikaʻi loa, a he semiconductor hiki ke pale aku i ka oxidation i nā mahana kiʻekiʻe; He lōʻihi ka ratio diameter nui o nā whiskers β-SiC, ʻoi aku ka kiʻekiʻe o ka ʻili, ka ratio diameter kiʻekiʻe, a me ka haʻahaʻa o ka ʻāpana i loko o nā whiskers, ʻoi aku ka maikaʻi o kāna hana ma mua o nā mea ʻē aʻe inā paha e hoʻokomo ʻia i loko o kahi ʻano corrosive, ʻoihana abrasive loa a me ka mining, a i ʻole i hōʻike ʻia i nā mahana ma mua o 1400°C. Loaʻa i ke kālepa nā mea hoʻohui keramika a me nā metala, me nā mea hoʻohui wela ultrahigh.


    Nā kikoʻī o Silicon Carbide:

    HuahanaʻAno

    Silicon Carbide(β-SiCʻOluʻolu)

    Silicon Carbide

    (β-SiCPauka)

    Silicon Carbide(α-SiC Pauka)

    ʻIke pae

    ≥99%

    β≥99%

    ≥99%

    ka hoʻohuihui kemika

    (wt%)

    C

    >30

    >30

    -

    S

    <0.12

    <0.12

    -

    P

    <0.005

    <0.005

    -

    Fe2O3

    <0.01

    <0.01

    -

    ʻO ka palaoa(μm)

    Hoʻopilikino ʻana

    Lama

    Xinli Abrasive

     

    siccc
    sicc2
    csic

    Nā hoʻohana nui o ka silicon carbide: Hiki iā Xinli Abrasive ke hāʻawi i ka silicon carbide no nā ʻano hoʻohana like ʻole, me ka hexagonal a i ʻole rhombohedral α-SiC a me ka cubic β-SiC a me β-SiC whiskers. Hiki i nā mea i hui pū ʻia me ka silicon carbide a me nā plastics, nā metala, a me nā keramika ke hoʻomaikaʻi nui i kona mau waiwai like ʻole. Ma muli o kona kūpaʻa wela kiʻekiʻe, ka ikaika kiʻekiʻe, a me ka conductivity wela kiʻekiʻe, hoʻohana nui ʻia ia i nā mea ikehu atomika, nā mea kemika, ka hana wela kiʻekiʻe, a me nā mea uila a me nā mea uila. , kahua semiconductor, nā ʻāpana hoʻomehana uila a me nā resistors, a pēlā aku. Hiki ke hoʻohana ʻia i nā abrasives, nā mea hana abrasive, nā mea refractory holomua, a me nā keramika maikaʻi.

  • Ma mua:
  • Aʻe:

    • Hāʻawi ka cubic silicon carbide i nā noi like ʻole ma nā ʻoihana he nui, ʻoi aku hoʻi i nā mea uila mana kiʻekiʻe, nā polokalamu RF, nā mea uila mana, nā substrates semiconductor, nā wahi wela kiʻekiʻe, nā sensor, a me nā optoelectronics.

    sicc1


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