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F10-F220 Hoʻopili a me ka wili ʻana i ka ʻeleʻele Silicon Carbide Grit


  • Mea Hana:ʻO Sic
  • Ka nui o ka nui:1.45-1.56g/cm3
  • Ka nui o ke kinoea:3.12 g/cm3
  • Nui:F12-F220
  • Waihoʻoluʻu:ʻeleʻele
  • ʻAno:ʻO ka ʻōniʻoniʻo granular
  • ʻIke SiC:>98%
  • Hoʻohana:Hoʻopili ʻana. Wili a me ka hoʻoheheʻe ʻana i ke one
  • ʻŌnaehana kristal:Hexagonal
  • Nā kikoʻī huahana

    Nā noi

    Hoʻolauna ʻana i ka Silicon Carbide ʻEleʻele

    Ma muli o ka laha ʻole o ka moissanite kūlohelohe, ʻo ka hapa nui o ka silicon carbide he synthetic. Hoʻohana ʻia ia ma ke ʻano he abrasive, a ʻoi aku ka manawa hou ma ke ʻano he semiconductor a me ka diamond simulant o ke ʻano gem. ʻO ke kaʻina hana maʻalahi loa, ʻo ia ka hoʻohui ʻana i ke one silica a me ke kalapona i loko o ka umu pale uila Acheson graphite ma kahi mahana kiʻekiʻe, ma waena o 1,600 °C (2,910 °F) a me 2,500 °C (4,530 °F). Hiki ke hoʻololi ʻia nā ʻāpana SiO2 maikaʻi i loko o nā mea kanu (e like me nā ʻōpala laiki) i SiC ma ka hoʻomehana ʻana i ke kalapona keu mai ka mea organik. ʻO ka silica fume, kahi huahana o ka hana ʻana i ka metala silicon a me nā ferrosilicon alloys, hiki ke hoʻololi ʻia i SiC ma ka hoʻomehana ʻana me ka graphite ma 1,500 °C (2,730 °F).

    ʻO Silicon carbide ka mea i hoʻohana nui ʻia a ʻo ia kekahi o nā mea waiwai loa. Hiki ke kapa ʻia he corundum a i ʻole ke one refractory. He palupalu a ʻoi hoʻi kona conductivity uila a me ka wela i kekahi kekelē. ʻO nā abrasives i hana ʻia mai ia mea he kūpono no ka hana ʻana ma ka hao i hoʻolei ʻia, ka metala non-ferrous, ka pōhaku, ka ʻili, ka laholio, a pēlā aku. Hoʻohana nui ʻia hoʻi ia ma ke ʻano he mea refractory a me ka mea hoʻohui metallurgical.

    silika ʻeleʻele

    ʻO ka hoʻohuihui kemika Silicon Carbide ʻeleʻele (%)

    ʻOluʻolu ʻO Sic FC Fe2O3
    F12-F90 ≥98.50 <0.20 ≤0.60
    F100-F150 ≥98.00 <0.30 ≤0.80
    F180-F220 ≥97.00 <0.30 ≤1.20
    F230-F400 ≥96.00 <0.40 ≤1.20
    F500-F800 ≥95.00 <0.40 ≤1.20
    F1000-F1200 ≥93.00 <0.50 ≤1.20
    P12-P90 ≥98.50 <0.20 ≤0.60
    P100-P150 ≥98.00 <0.30 ≤0.80
    P180-P220 ≥97.00 <0.30 ≤1.20
    P230-P500 ≥96.00 <0.40 ≤1.20
    P600-P1500 ≥95.00 <0.40 ≤1.20
    P2000-P2500 ≥93.00 <0.50 ≤1.20

    Papa Kuhikuhi Kino Silicon Carbide ʻEleʻele

    Nā ʻuala palai Ka nui o ka nui
    (g/cm3)
    Ka nui o ka paʻa
    (g/cm3)
    Nā ʻuala palai Ka nui o ka nui
    (g/cm3)
    Ka nui o ka paʻa
    (g/cm3)
    F16 ~ F24 1.42~1.50 ≥1.50 F100 1.36~1.45 ≥1.45
    F30 ~ F40 1.42~1.50 ≥1.50 F120 1.34~1.43 ≥1.43
    F46 ~ F54 1.43~1.51 ≥1.51 F150 1.32~1.41 ≥1.41
    F60 ~ F70 1.40~1.48 ≥1.48 F180 1.31~1.40 ≥1.40
    F80 1.38~1.46 ≥1.46 F220 1.31~1.40 ≥1.40
    F90 1.38~1.45 ≥1.45      

    Loaʻa ka nui o ka ʻeleʻele Silicon Carbide

    F12-F1200, P12-P2500

    0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh

    Hiki ke hoʻolako ʻia nā kikoʻī kūikawā ʻē aʻe ma ke noi.


  • Ma mua:
  • Aʻe:

  • Nā noi ʻeleʻele Silicon Carbide

    No ka abrasive: Lapping, Polishing, Coatings, Grinding, Pressure bursting.

    No ka mea kūpaʻa ʻole: Nā mea pāpaho kūpaʻa ʻole no ka hoʻolei ʻana a i ʻole nā ​​​​​​laina metallurgical, Technical Ceramics.

    No nā noi ʻano hou: Nā mea hoʻololi wela, nā lako hana Semiconductor, kānana wai.

    Nā noi ʻeleʻele Silicon Carbide

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